| PART |
Description |
Maker |
| NPS35 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
| NPIS20 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
| BCR1AM-12 |
LOW POWER USE GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric Corporation
|
| HER107G HER103G HER101G |
High Efficiency Rectifier Glass Passivation Junction
|
Weitron Technology
|
| CR02AM-8A CR2AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR5AS |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20A BCR20E BCR20C |
MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
